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trenchfet power mosfet new low thermal resistance powerpak package with low 1.07mm profile optimized for high-side synchronous rectifier operation 100% r g tested

dc/dc converters rohs SI7686DP vishay siliconix new product document number: 73451 s?51334?rev. a, 25-jul-05 www.vishay.com 1 n-channel 30-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) a q g (typ) 30 0.0095 @ v gs = 10 v 35 92 nc 30 0.014 @ v gs = 4.5 v 35 9 . 2 n c ordering information: SI7686DP-t1?e3 (lead (pb)-free) n-channel mosfet g d s 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view

parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t c = 25 c 35 a continuous drain current (t j = 150 c) t c = 70 c i d 35 a continuous drain current (t j = 150 c) t a = 25 c i d 17.9 b, c t a = 70 c 14.3 b, c a pulsed drain current i dm 50 continuous source drain diode current t c = 25 c i s 31.5 continuous source-drain diode current t a = 25 c i s 4.2 b, c t c = 25 c 37.9 maximum power dissipation t c = 70 c p d 24.2 w maximum power dissipation t a = 25 c p d 5 b, c w t a = 70 c 3.2 b, c operating junction and storage temperature range t j , t stg ?55 to 150 c soldering recommendations (peak temperature) d, e 260 c

parameter symbol typical maximum unit maximum junction-to-ambient b, f t 10 sec r thja 21 25 c/w maximum junction-to-case (drain) steady state r thjc 2.8 3.3 c/w notes: a. package limited. b. surface mounted on 1? x 1? fr4 board. c. t = 10 sec d. see solder profile ( http://www.vishay.com/doc?73257 ). the powerpak so-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot be guarantee d and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions is 70 c/w.
SI7686DP vishay siliconix new product www.vishay.com 2 document number: 73451 s?51334?rev. a, 25-jul-05

parameter symbol test condition min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient v ds /t j i d = 250 a 31.3 mv/ c v gs(th) temperature coefficient v gs(th) /t j i d = 250 a ?6 m v/ c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 3 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a z ero g ate v o l tage d ra i n c urrent i dss v ds = 30 v, v gs = 0 v, t j = 55 c 10 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 50 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 13.8 a 0.0078 0.0095 drain - so u rce on - state resistance a r ds(on) v gs = 4.5 v, i d = 11.4 a 0.011 0.014 forward transconductance a g fs v ds = 15 v, i d = 13.8 a 56 s dynamic b input capacitance c iss 1220 output capacitance c oss v ds = 15 v, v gs = 0 v, f = 1 mhz 230 pf reverse transfer capacitance c rss 98 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 13.8 a 17 26 t ota l g ate ch arge q g 9.2 14 nc gate-source charge q gs v ds = 15 v, v gs = 5 v, i d = 13.8 a 4.1 n c gate-drain charge q gd 2.8 gate resistance r g f = 1 mhz 0.8 1.2 turn-on delay time t d(on) 20 30 rise time t r v dd = 15 v, r l = 1.5 20 30 turn-off delay time t d(off) v dd = 15 v , r l = 1 . 5 i d 10 a, v gen = 4.5 v, r g = 1 20 30 fall time t f 8 15 ns turn-on delay time t d(on) 13 20 ns rise time t r v dd = 15 v, r l = 1.5 16 25 turn-off delay time t d(off) v dd = 15 v , r l = 1 . 5 i d 10 a, v gen = 10 v, r g = 1 23 35 fall time t f 8 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 31.5 a pulse diode forward current a i sm 50 a body diode voltage v sd i s = 2.6 a 0.8 1.2 v body diode reverse recovery time t rr 25 50 ns body diode reverse recovery charge q rr i f =26a di/dt = 100 a/ st j =25 c 15 30 nc reverse recovery fall time t a i f = 2 . 6 a , di/dt = 100 a/ s, t j = 25 c 12.5 ns reverse recovery rise time t b 12.5 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SI7686DP vishay siliconix new product document number: 73451 s?51334?rev. a, 25-jul-05 www.vishay.com 3

0.0040 0.0060 0.0080 0.0100 0.0120 0.0140 0 1020304050 0 2 4 6 8 10 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ?50 ?25 0 25 50 75 100 125 150 0 300 600 900 1200 1500 0 5 10 15 20 25 30 c rss c oss c iss i d = 13.8 a v gs = 10 v v gs = 10 v gate charge on-resistance vs. drain current and gate voltage ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs i d ? drain current (a) capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) v gs = 4.5 v r ds(on) ? on-resiistance (normalized) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 50 0.0 0.4 0.8 1.2 1.6 2.0 v gs = 10 thru 4 v 25 c t c = 125 c ?55 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d r ds(on) ? on-resistance (m ) v gs = 4.5 v v ds = 21 v v ds = 15 v i d = 13.8 a 3 v
SI7686DP vishay siliconix new product www.vishay.com 4 document number: 73451 s?51334?rev. a, 25-jul-05

safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.001 10 ? drain current (a) i d 0.1 1 ms t a = 25 c single pulse 10 ms 100 ms dc *limited by r ds(on) v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified 1 s 10 s 0.005 0.010 0.015 0.020 0.025 0.030 345678910 1.0 1.2 1 10 50 0.00 0.2 0.4 0.6 0.8 t j = 25 c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s i d = 13.8 a on-resistance vs. gate-to-source voltage v gs ? gate-to-source voltage (v) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 ?50 ?25 0 25 50 75 100 125 150 i d = 250 a threshold voltage t j ? temperature ( c) 0 30 50 10 20 power (w) time (sec) 40 10 600 1 0.1 0.01 single pulse power, junction-to-ambient r ds(on) ? drain-to-source on-resistance ( ) v gs(th) (v) t j = 25 c t j = 125 c t j = 150 c 100 0.01
SI7686DP vishay siliconix new product document number: 73451 s?51334?rev. a, 25-jul-05 www.vishay.com 5

0 10 20 30 40 50 60 0 25 50 75 100 125 150 current de-rating* i d ? drain current (a) t c ? case temperature ( c) *the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the packa ge limit. package limited 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 power de-rating t c ? case temperature ( c) power
SI7686DP vishay siliconix new product www.vishay.com 6 document number: 73451 s?51334?rev. a, 25-jul-05

10 ?2 1 10 600 10 ?1 10 ?4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ?3 10 ?2 1 10 ?1 10 ?4 2 1 0.1 0.01 0.2 0.1 duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 10 ?3 0.02 0.05 single pulse vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related docu ments such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?73451 .
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.

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